The influence of Er3+ doping on the structural and optical properties of CeO2 thin films grown by PED
Identifieur interne : 000350 ( Main/Repository ); précédent : 000349; suivant : 000351The influence of Er3+ doping on the structural and optical properties of CeO2 thin films grown by PED
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Abstract
Erbium doped CeO2 thin films were deposited on both Corning glass substrates and indium doped tin oxide (ITO) coated glass substrates by pulsed e-beam deposition (PED) method at room temperature. Structural features of Er doped CeO2 thin films were studied with X-ray diffraction (XRD) and micro-Raman spectra. The XRD patterns of all films showed polycrystalline nature and cubic crystalline structure. Raman active peaks for both undoped CeO2 and Er doped CeO2 films were determined at ∼465cm-1. The Raman shift observed in this study can also be assigned to Raman active modes of CeO2 that are shifted from the original position due to different doping concentration. The optical properties of CeO2 films and Er doped CeO2 films, which were determined from transmittance and reflectance measurements at room temperature, were very similar in character. The refractive indices and extinction coefficients, which were calculated from 3.5 to 1.25 eV (300-1000nm), were between 1.5-3 and 0.05-0.2, respectively. The optical band gaps were deduced from the absorption coefficient according to solid band theory. The electrochromic measurements revealed that 2% Er doped CeO2 films grown on ITO + WO3 substrates had highest charge density compared to the other samples. Long-time cyclic voltammetry (CV) and chronoamperometry (CA) measurements were carried out to investigate the stability of this film.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The influence of Er<sup>3+</sup> doping on the structural and optical properties of CeO<sub>2</sub> thin films grown by PED</title><author><name sortKey="Tatar, B" uniqKey="Tatar B">B. Tatar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Namik Kemal University, Department of Physics</s1><s2>Tekirdag</s2><s3>TUR</s3><sZ>1 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Tekirdag</wicri:noRegion></affiliation></author><author><name sortKey="Gokdemir, F P" uniqKey="Gokdemir F">F. P. Gökdemir</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Yildiz Technical University, Department of Physics</s1><s2>Esenler, istanbul</s2><s3>TUR</s3><sZ>2 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Esenler, istanbul</wicri:noRegion></affiliation></author><author><name sortKey="Pehlivan, E" uniqKey="Pehlivan E">E. Pehlivan</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Uppsala University, Department of Engineering Sciences, The Angstrom Laboratory</s1><s2>Uppsala</s2><s3>SWE</s3><sZ>3 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Uppsala</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Istanbul Technical University, Faculty of Arts and Science</s1><s2>Maslak, Istanbul</s2><s3>TUR</s3><sZ>3 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Maslak, Istanbul</wicri:noRegion></affiliation></author><author><name sortKey="Urgen, M" uniqKey="Urgen M">M. Urgen</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Istanbul Technical University, Department of Material Science and Engineering</s1><s2>Maslak, Istanbul</s2><s3>TUR</s3><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Maslak, Istanbul</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0026778</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0026778 INIST</idno><idno type="RBID">Pascal:14-0026778</idno><idno type="wicri:Area/Main/Corpus">000273</idno><idno type="wicri:Area/Main/Repository">000350</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cerium oxide</term><term>Crystal structure</term><term>Inorganic compounds</term><term>Rare earth compounds</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Structure cristalline</term><term>Oxyde de cérium</term><term>Ce O</term><term>CeO2</term><term>Composé minéral</term><term>Composé de lanthanide</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Erbium doped CeO<sub>2</sub> thin films were deposited on both Corning glass substrates and indium doped tin oxide (ITO) coated glass substrates by pulsed e-beam deposition (PED) method at room temperature. Structural features of Er doped CeO<sub>2</sub> thin films were studied with X-ray diffraction (XRD) and micro-Raman spectra. The XRD patterns of all films showed polycrystalline nature and cubic crystalline structure. Raman active peaks for both undoped CeO<sub>2</sub> and Er doped CeO<sub>2</sub> films were determined at ∼465cm<sup>-1</sup>. The Raman shift observed in this study can also be assigned to Raman active modes of CeO<sub>2</sub> that are shifted from the original position due to different doping concentration. The optical properties of CeO<sub>2</sub> films and Er doped CeO<sub>2</sub> films, which were determined from transmittance and reflectance measurements at room temperature, were very similar in character. The refractive indices and extinction coefficients, which were calculated from 3.5 to 1.25 eV (300-1000nm), were between 1.5-3 and 0.05-0.2, respectively. The optical band gaps were deduced from the absorption coefficient according to solid band theory. The electrochromic measurements revealed that 2% Er doped CeO<sub>2</sub> films grown on ITO + WO<sub>3</sub> substrates had highest charge density compared to the other samples. Long-time cyclic voltammetry (CV) and chronoamperometry (CA) measurements were carried out to investigate the stability of this film.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>285</s2></fA05><fA06><s3>p. b</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The influence of Er<sup>3+</sup> doping on the structural and optical properties of CeO<sub>2</sub> thin films grown by PED</s1></fA08><fA11 i1="01" i2="1"><s1>TATAR (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>GÖKDEMIR (F. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>PEHLIVAN (E.)</s1></fA11><fA11 i1="04" i2="1"><s1>URGEN (M.)</s1></fA11><fA14 i1="01"><s1>Namik Kemal University, Department of Physics</s1><s2>Tekirdag</s2><s3>TUR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Yildiz Technical University, Department of Physics</s1><s2>Esenler, istanbul</s2><s3>TUR</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Uppsala University, Department of Engineering Sciences, The Angstrom Laboratory</s1><s2>Uppsala</s2><s3>SWE</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Istanbul Technical University, Faculty of Arts and Science</s1><s2>Maslak, Istanbul</s2><s3>TUR</s3><sZ>3 aut.</sZ></fA14><fA14 i1="05"><s1>Istanbul Technical University, Department of Material Science and Engineering</s1><s2>Maslak, Istanbul</s2><s3>TUR</s3><sZ>4 aut.</sZ></fA14><fA20><s1>409-416</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000500725200430</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>52 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0026778</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Erbium doped CeO<sub>2</sub> thin films were deposited on both Corning glass substrates and indium doped tin oxide (ITO) coated glass substrates by pulsed e-beam deposition (PED) method at room temperature. Structural features of Er doped CeO<sub>2</sub> thin films were studied with X-ray diffraction (XRD) and micro-Raman spectra. The XRD patterns of all films showed polycrystalline nature and cubic crystalline structure. Raman active peaks for both undoped CeO<sub>2</sub> and Er doped CeO<sub>2</sub> films were determined at ∼465cm<sup>-1</sup>. The Raman shift observed in this study can also be assigned to Raman active modes of CeO<sub>2</sub> that are shifted from the original position due to different doping concentration. The optical properties of CeO<sub>2</sub> films and Er doped CeO<sub>2</sub> films, which were determined from transmittance and reflectance measurements at room temperature, were very similar in character. The refractive indices and extinction coefficients, which were calculated from 3.5 to 1.25 eV (300-1000nm), were between 1.5-3 and 0.05-0.2, respectively. The optical band gaps were deduced from the absorption coefficient according to solid band theory. The electrochromic measurements revealed that 2% Er doped CeO<sub>2</sub> films grown on ITO + WO<sub>3</sub> substrates had highest charge density compared to the other samples. Long-time cyclic voltammetry (CV) and chronoamperometry (CA) measurements were carried out to investigate the stability of this film.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Crystal structure</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Oxyde de cérium</s0><s5>15</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Cerium oxide</s0><s5>15</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Cerio óxido</s0><s5>15</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Ce O</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>CeO2</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Composé de lanthanide</s0><s5>63</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Rare earth compounds</s0><s5>63</s5></fC03><fN21><s1>027</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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